Abstract:
The invention relates to a method for producing integrated circuits of high packing density in a single crystalline substrate. The method contemplates that initially the transistors of the circuits are produced with a separate subcollector in respective mutually spaced regions of the substrate in such a manner that impurity ions are introduced through a number of consecutive diffusion process steps. The regions are provided with separate isolation barriers approaching the outer edges of the respective subcollectors. Thereafter, the resistors in the circuits are produced in respective regions located adjacent the isolation barriers for the transistors in such manner that impurity ions are introduced by at least one injection process step.
Abstract:
The invention refers to a contactless switch, comprising a Halleffect element that has a pair of input electrodes for applying an operating voltage to generate a current in an internal current path and at least one output electrode located adjacent the current path to derive a Hall-potential when an external magnetic field influences the current laterally, and an amplifier circuit that is controlled by the Hall-potential. According to the invention, the Hall-effect element is provided with at least one control electrode for controlling the magnitude of such current, and the amplifier circuit is provided with at least one output terminal connected to the control electrode of the Hall-effect element for feeding back an amplified Hall-potential in such a phase that the amplifier circuit is provided with positive feedback.