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    BOTTOM GATE TYPE ORGANIC SEMICONDUCTOR TRANSISTOR
    2.
    发明申请
    BOTTOM GATE TYPE ORGANIC SEMICONDUCTOR TRANSISTOR 审中-公开

    公开(公告)号：US20190221754A1

    公开(公告)日：2019-07-18

    申请号：US16358933

    申请日：2019-03-20

    Applicant: FUJIFILM Corporation

    Inventor： Takashi GOTO ,  Eiji FUKUZAKI ,  Tetsuya WATANABE

    IPC: H01L51/00 ,  H01L51/05

    CPC classification number: H01L51/0074 ,  H01L29/786 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/05 ,  H01L51/0516 ,  H01L51/0545

    Abstract: An object is to provide a bottom gate type organic semiconductor transistor in which a sufficient carrier mobility is exhibited, a variation in performance between elements is small, and power consumption is also suppressed.Provided is a bottom gate type organic semiconductor transistor including: a gate insulating layer; and an organic semiconductor layer that is disposed adjacent to the gate insulating layer. in which a surface free energy of a surface of the gate insulating layer on the organic semiconductor layer side is 20 to 50 mN/m, an arithmetic average roughness Ra of the surface of the gate insulating layer on the organic semiconductor layer side is 2 nm or lower, and the organic semiconductor layer includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group, and R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

    ORGANIC SEMICONDUCTOR ELEMENT, COMPOSITION, METHOD OF PURIFYING COMPOUND, AND APPLICATION THEREOF
    6.
    发明申请
    ORGANIC SEMICONDUCTOR ELEMENT, COMPOSITION, METHOD OF PURIFYING COMPOUND, AND APPLICATION THEREOF 有权

    公开(公告)号：US20210020841A1

    公开(公告)日：2021-01-21

    申请号：US17061756

    申请日：2020-10-02

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya WATANABE ,  Yukio TANI

    IPC: H01L51/00

    Abstract: Provided are an organic semiconductor element, a composition, an organic semiconductor composition, an organic semiconductor film, a method of producing a composition, a method of manufacturing an organic semiconductor element, and a method of purifying a compound. The organic semiconductor element includes an organic semiconductor film formed by forming a composition into a film, in which the composition contains a compound represented by the following formula (where R1 to R8 each independently represent a hydrogen atom or a substituent), and a total content of sodium element, potassium element, silicon element, and aluminum element in the composition is 50 ppm or less. The organic semiconductor element has high heat resistance of carrier mobility.

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