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    Photovoltaic devices including MG-doped semiconductor films
    2.
    发明授权
    Photovoltaic devices including MG-doped semiconductor films 有权
    包括掺杂有MG的半导体膜的光伏器件

    公开(公告)号：US09537039B2

    公开(公告)日：2017-01-03

    申请号：US13685035

    申请日：2012-11-26

    Applicant: FIRST SOLAR, INC.

    Inventor： Akhlesh Gupta ,  Ricky C. Powell ,  David Eaglesham

    IPC: H01L31/00 ,  H01L21/00 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

    CPC classification number: H01L31/02963 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.

    Abstract translation: 光伏电池可以包括与半导体层接触的掺杂剂。 光伏电池可以包括透明导电层和与透明导电层接触的第一半导体层，第一半导体层包括镁。 在某些情况下，基板可以是玻璃基板。 在其他情况下，衬底可以是金属层。 第一半导体层可以包括CdS。 第一半导体层可以具有在约200或3000埃之间的厚度。 第一半导体层可以包括1-20％的镁。 制造太阳能电池的方法可以包括提供透明导电层并沉积与透明导电层接触的第一半导体层，第一半导体层用镁处理。

    Photovoltaic devices including heterojunctions
    6.
    发明授权
    Photovoltaic devices including heterojunctions 有权
    包括异质结的光伏器件

    公开(公告)号：US09520513B2

    公开(公告)日：2016-12-13

    申请号：US13969007

    申请日：2013-08-16

    Applicant: FIRST SOLAR, INC

    Inventor： David Eaglesham

    IPC: H01L31/044 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/18

    CPC classification number: H01L31/0336 ,  H01L31/072 ,  H01L31/1828 ,  H01L31/184 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer, and a second semiconductor layer that includes a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact. The photovoltaic cell further includes an interfacial layer between the first and second semiconductor layers that enhances a rectifying junction formed between the III-V and II-VI compound semiconductor materials.

    Abstract translation: 一种包括第一半导体层的光伏电池，包括III-V族化合物半导体，位于透明导电层上的第一半导体层以及包含II-VI族化合物半导体的第二半导体层，所述第二半导体层位于第一 半导体层和背面金属接触。 光伏电池还包括在第一和第二半导体层之间的界面层，其增强了形成在III-V和II-VI化合物半导体材料之间的整流结。

    PHOTOVOLTAIC DEVICES INCLUDING HETEROJUNCTIONS
    7.
    发明申请
    PHOTOVOLTAIC DEVICES INCLUDING HETEROJUNCTIONS 有权
    包括异常的光电器件

    公开(公告)号：US20140008662A1

    公开(公告)日：2014-01-09

    申请号：US13969007

    申请日：2013-08-16

    Applicant: FIRST SOLAR, INC

    Inventor： David Eaglesham

    IPC: H01L31/0336

    CPC classification number: H01L31/0336 ,  H01L31/072 ,  H01L31/1828 ,  H01L31/184 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

    Abstract: A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer, and a second semiconductor layer that includes a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact. The photovoltaic cell further includes an interfacial layer between the first and second semiconductor layers that enhances a rectifying junction formed between the III-V and II-VI compound semiconductor materials.

    Abstract translation: 一种包括第一半导体层的光伏电池，包括III-V族化合物半导体，位于透明导电层上的第一半导体层以及包含II-VI族化合物半导体的第二半导体层，所述第二半导体层位于第一 半导体层和背面金属接触。 光伏电池还包括在第一和第二半导体层之间的界面层，其增强了形成在III-V和II-VI化合物半导体材料之间的整流结。

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