公开(公告)号：US09537039B2

公开(公告)日：2017-01-03

申请号：US13685035

申请日：2012-11-26

Applicant: FIRST SOLAR, INC.

Inventor： Akhlesh Gupta ,  Ricky C. Powell ,  David Eaglesham

IPC: H01L31/00 ,  H01L21/00 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

CPC classification number: H01L31/02963 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.

Abstract translation: 光伏电池可以包括与半导体层接触的掺杂剂。 光伏电池可以包括透明导电层和与透明导电层接触的第一半导体层，第一半导体层包括镁。 在某些情况下，基板可以是玻璃基板。 在其他情况下，衬底可以是金属层。 第一半导体层可以包括CdS。 第一半导体层可以具有在约200或3000埃之间的厚度。 第一半导体层可以包括1-20％的镁。 制造太阳能电池的方法可以包括提供透明导电层并沉积与透明导电层接触的第一半导体层，第一半导体层用镁处理。

公开(公告)号：US20130143352A1

公开(公告)日：2013-06-06

申请号：US13685035

申请日：2012-11-26

Applicant: First Solar, Inc.

Inventor： Akhlesh Gupta ,  Ricky C. Powell ,  David Eaglesham

IPC: H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Abstract translation: 光伏电池可以包括与半导体层接触的掺杂剂。

公开(公告)号：US20130130433A1

公开(公告)日：2013-05-23

申请号：US13678800

申请日：2012-11-16

Applicant: FIRST SOLAR, INC.

Inventor： Akhlesh Gupta ,  Markus Gloeckler ,  Ricky C. Powell

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  B05B13/0221 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67706 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Abstract translation: 公开了一种方法和装置，其中氯化镉沉积在碲化镉层上，同时热处理碲化镉层。

公开(公告)号：US09318642B2

公开(公告)日：2016-04-19

申请号：US13678800

申请日：2012-11-16

Applicant: FIRST SOLAR, INC.

Inventor： Akhlesh Gupta ,  Markus Gloeckler ,  Ricky C. Powell

IPC: H01L31/18 ,  C23C14/12 ,  C23C14/56 ,  C23C14/06 ,  C23C14/24 ,  H01L21/02 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1828 ,  B05B13/0221 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/56 ,  H01L21/02562 ,  H01L21/02664 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67706 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Abstract translation: 公开了一种方法和装置，其中氯化镉沉积在碲化镉层上，同时热处理碲化镉层。