公开(公告)号：US20150093914A1

公开(公告)日：2015-04-02

申请号：US14044514

申请日：2013-10-02

Applicant: Intermolecular ,  GLOBALFOUNDRIES, Inc.

Inventor： Bin Yang ,  Abhijit Pethe ,  Albert Lee ,  Amol Joshi ,  Ashish Bodke ,  Kevin Kashefi ,  Salil Mujumdar

IPC: H01L21/02

CPC classification number: H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/2807 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon and exposing the semiconductor substrate to first and second atomic layer deposition (ALD) processes. The first ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a first oxygen-containing precursor. The second ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a second oxygen-containing precursor.

Abstract translation: 在各种示例性实施例中提供了用于制造集成电路的方法。 在一个实施例中，一种用于制造集成电路的方法包括提供包括形成在其上的GeO x层的锗基半导体衬底，并将半导体衬底暴露于第一和第二原子层沉积（ALD）工艺。 第一ALD工艺包括将半导体衬底暴露于包含铝的第一气态前体，并将半导体衬底暴露于包含第一含氧前体的第二气态前体。 第二ALD工艺包括将半导体衬底暴露于包含铝的第一气态前体，并将半导体衬底暴露于包含第二含氧前体的第二气态前体。

公开(公告)号：US20150093887A1

公开(公告)日：2015-04-02

申请号：US14253668

申请日：2014-04-15

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Bin Yang ,  Shurong Liang ,  Kristina Young-Fisher ,  Kevin Kashefi ,  Amol Joshi ,  Salil Mujumdar ,  Abhijit Pethe ,  Albert Lee ,  Ashish Bodke

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/28255 ,  H01L21/02046 ,  H01L21/2807 ,  H01L21/31116 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate including a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a NF3/NH3 plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.

Abstract translation: 在各种示例性实施例中提供了用于制造集成电路的方法。 在一个实施例中，一种用于制造集成电路的方法包括提供锗基半导体衬底，其包括在其上形成的具有第一厚度的GeO x层，通过将半导体衬底暴露于NF3 / NH3等离子体干蚀刻来去除GeOx层的一部分 以便将GeO x层的第一厚度减小到第二厚度，并且在半导体衬底的GeO x层上沉积高k材料。

公开(公告)号：US20150093889A1

公开(公告)日：2015-04-02

申请号：US14044376

申请日：2013-10-02

Applicant: Intermolecular ,  GLOBALFOUNDRIES, Inc.

Inventor： Bin Yang ,  Abhijit Pethe ,  Albert Lee ,  Amol Joshi ,  Ashish Bodke ,  Kevin Kashefi ,  Salil Mujumdar

IPC: H01L29/51

CPC classification number: H01L29/517 ,  H01L21/28255 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659

Abstract: Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a hydrogen-plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.

Abstract translation: 在各种示例性实施例中提供了用于制造集成电路的方法。 在一个实施例中，一种用于制造集成电路的方法包括：提供锗基半导体衬底，其包含在其上形成的具有第一厚度的GeO x层，通过将半导体衬底暴露于氢等离子体干法蚀刻来去除GeOx层的一部分，从而 以将GeOx层的第一厚度减小到第二厚度，以及在半导体衬底的GeO x层上沉积高k材料。