公开(公告)号：US09443776B2

公开(公告)日：2016-09-13

申请号：US14729446

申请日：2015-06-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ronald G. Filippi ,  Jason P. Gill ,  Vincent J. McGahay ,  Paul S. McLaughlin ,  Conal E. Murray ,  Hazara S. Rathore ,  Thomas M. Shaw ,  Ping-Chuan Wang

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/522 ,  H05K1/09 ,  H05K1/02

CPC classification number: H01L22/34 ,  H01L22/32 ,  H01L23/5226 ,  H01L23/562 ,  H01L2924/0002 ,  H05K1/0268 ,  H05K1/0269 ,  H05K1/092 ,  Y10S438/927 ,  Y10T29/49004 ,  H01L2924/00

Abstract: A test structure used to determine reliability performance includes a patterned metallization structure having multiple interfaces, which provide stress risers. A dielectric material surrounds the metallization structure, where a mismatch in coefficients of thermal expansion (CTE) between the metallization structure and the surrounding dielectric material exist such that a thermal strain value is provided to cause failures under given stress conditions as a result of CTE mismatch to provide a yield indicative of reliability for a manufacturing design.

Abstract translation: 用于确定可靠性性能的测试结构包括具有多个界面的图案化金属化结构，其提供应力梯度。 电介质材料围绕金属化结构，其中存在金属化结构和周围电介质材料之间的热膨胀系数（CTE）不匹配，使得提供热应变值以引起由于CTE失配导致的给定应力条件下的故障 以提供指示制造设计的可靠性的产量。

公开(公告)号：US09476927B2

公开(公告)日：2016-10-25

申请号：US14161309

申请日：2014-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Troy L. Graves-Abe ,  Chandrasekharan Kothandaraman ,  Conal E. Murray

IPC: G01R31/02 ,  H01L21/66 ,  H01L23/48 ,  G01R31/26 ,  G01M5/00

CPC classification number: G01R31/021 ,  G01M5/0033 ,  G01M5/0083 ,  G01R31/26 ,  H01L22/34 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure to detect changes in the integrity of vertical electrical connection structures including a semiconductor layer and an electrically conductive material extending through an entire depth of the semiconductor layer. The electrically conductive material has a geometry that encloses a pedestal portion of the semiconductor layer within an interior perimeter of the electrically conductive material. At least one semiconductor device is present on the pedestal portion of the semiconductor layer within the perimeter of the electrically conductive material.

Abstract translation: 检测包括半导体层和延伸穿过半导体层的整个深度的导电材料的垂直电连接结构的完整性变化的结构。 导电材料具有在导电材料的内部周边内包围半导体层的基座部分的几何形状。 至少一个半导体器件存在于导电材料的周边内的半导体层的基座部分上。