公开(公告)号：US09847290B1

公开(公告)日：2017-12-19

申请号：US15375924

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L21/768 ,  H01L29/40 ,  H01L29/45 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

公开(公告)号：US10446484B2

公开(公告)日：2019-10-15

申请号：US15801501

申请日：2017-11-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Jochonia N. Nxumalo ,  Joyce C. Liu ,  Sami Rosenblatt ,  Chandrasekharan Kothandaraman

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

公开(公告)号：US09476927B2

公开(公告)日：2016-10-25

申请号：US14161309

申请日：2014-01-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Troy L. Graves-Abe ,  Chandrasekharan Kothandaraman ,  Conal E. Murray

IPC: G01R31/02 ,  H01L21/66 ,  H01L23/48 ,  G01R31/26 ,  G01M5/00

CPC classification number: G01R31/021 ,  G01M5/0033 ,  G01M5/0083 ,  G01R31/26 ,  H01L22/34 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure to detect changes in the integrity of vertical electrical connection structures including a semiconductor layer and an electrically conductive material extending through an entire depth of the semiconductor layer. The electrically conductive material has a geometry that encloses a pedestal portion of the semiconductor layer within an interior perimeter of the electrically conductive material. At least one semiconductor device is present on the pedestal portion of the semiconductor layer within the perimeter of the electrically conductive material.

Abstract translation: 检测包括半导体层和延伸穿过半导体层的整个深度的导电材料的垂直电连接结构的完整性变化的结构。 导电材料具有在导电材料的内部周边内包围半导体层的基座部分的几何形状。 至少一个半导体器件存在于导电材料的周边内的半导体层的基座部分上。

公开(公告)号：US09953900B2

公开(公告)日：2018-04-24

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L21/326 ,  H01L23/48 ,  H01L21/768 ,  H01L21/66

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.

公开(公告)号：US20170287812A1

公开(公告)日：2017-10-05

申请号：US15083914

申请日：2016-03-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： John M. Safran ,  Sami Rosenblatt ,  Michael S. Cranmer ,  Chandrasekharan Kothandaraman

IPC: H01L23/48 ,  H01L21/326 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/326 ,  H01L21/743 ,  H01L21/76898 ,  H01L22/14 ,  H01L22/32 ,  H01L22/34

Abstract: Device structures involving a conductor-filled via or trench, methods of forming such device structures, and methods of operating such device structures. A doped region is formed in the substrate. An opening, such as a via or trench, is formed that extends through the doped region and into a portion of the substrate beneath the doped region. A conductive plug in formed in the opening to provide the conductor-filled via or trench. The opening is positioned and dimensioned relative to a position and dimensions of the doped region to divide the doped region into a first section and a second section that is disconnected from the first section by the opening.