Abstract:
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming an abrupt junction in the channel regions of high density technologies, such as tight pitch FinFET devices, using recessed source-drain (S-D) regions and annealing techniques. In an embodiment, a faceted buffer layer, deposited before the S-D region is formed, may be used to control the profile and dopant concentration of the junction under the channel. In another embodiment, the profile and dopant concentration of the junction may be controlled via a dopant concentration gradient in the S-D region.
Abstract:
Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.