METHOD OF FORMING A PASSIVATION LAYER
    1.
    发明申请

    公开(公告)号:US20190131259A1

    公开(公告)日:2019-05-02

    申请号:US15795849

    申请日:2017-10-27

    Inventor: Qin Yuan Jun Liu

    Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.

    Method of forming a passivation layer

    公开(公告)号:US10283469B1

    公开(公告)日:2019-05-07

    申请号:US15795849

    申请日:2017-10-27

    Inventor: Qin Yuan Jun Liu

    Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.

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