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公开(公告)号:US20190131259A1
公开(公告)日:2019-05-02
申请号:US15795849
申请日:2017-10-27
Applicant: GLOBALFOUNDRIES Inc.
Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.
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公开(公告)号:US20170139324A1
公开(公告)日:2017-05-18
申请号:US14940857
申请日:2015-11-13
Applicant: GLOBALFOUNDRIES INC.
Inventor: Qin Yuan , Mark Chace , Jun Liu , Janine L. Protzman , Victoria L. Calero diaz del castillo
CPC classification number: G03F7/0387 , C08F283/04 , G03F7/029 , H01L21/02118 , H01L21/02348 , H01L23/293 , C08F220/20 , C08F220/56
Abstract: A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.
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公开(公告)号:US09740101B2
公开(公告)日:2017-08-22
申请号:US14940857
申请日:2015-11-13
Applicant: GLOBALFOUNDRIES INC.
Inventor: Qin Yuan , Mark Chace , Jun Liu , Janine L. Protzman , Victoria L. Calero diaz del castillo
CPC classification number: G03F7/0387 , C08F283/04 , G03F7/029 , H01L21/02118 , H01L21/02348 , H01L23/293 , C08F220/20 , C08F220/56
Abstract: A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.
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公开(公告)号:US10283469B1
公开(公告)日:2019-05-07
申请号:US15795849
申请日:2017-10-27
Applicant: GLOBALFOUNDRIES Inc.
Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.
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