Method of forming a passivation layer

    公开(公告)号:US10283469B1

    公开(公告)日:2019-05-07

    申请号:US15795849

    申请日:2017-10-27

    Inventor: Qin Yuan Jun Liu

    Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.

    Cleanability assessment of sublimate from lithography materials
    3.
    发明授权
    Cleanability assessment of sublimate from lithography materials 有权
    平版印刷材料的升华可溶性评估

    公开(公告)号:US09551696B2

    公开(公告)日:2017-01-24

    申请号:US14311380

    申请日:2014-06-23

    Abstract: A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.

    Abstract translation: 一种在热加热过程中测试从光刻材料脱气的聚合升华物的可清洁性的方法,包括: 将晶片放置在室内的晶片加热板上,晶片被光刻材料覆盖; 将具有起始组成的靶放置在所述腔中的所述晶片之上; 使用晶片加热板加热晶片以试图排出升华,其中升华在目标上冷凝; 在目标上形成聚合的升华; 并向目标物施加有机溶剂以确定聚合的升华物的可清洁性。

    METHOD OF FORMING A PASSIVATION LAYER
    4.
    发明申请

    公开(公告)号:US20190131259A1

    公开(公告)日:2019-05-02

    申请号:US15795849

    申请日:2017-10-27

    Inventor: Qin Yuan Jun Liu

    Abstract: A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.

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