Abstract:
A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.
Abstract:
A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.
Abstract:
A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.
Abstract:
A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.
Abstract:
A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.
Abstract:
A mass spectrometer system includes a chamber configured to receive a sample; a gas source coupled to the chamber for delivering a gas across the sample; and a desorption energy source configured to desorb a contaminant from a test area of the sample. The system may also include a mass spectrometer including a vacuum source, an ion source, a mass analyzer and a detector, and a capillary transfer line operatively coupled to the chamber and the mass spectrometer and configured to deliver desorbed volatiles of the contaminant from the test area to the mass spectrometer, the capillary transfer line having an intake proximal the test area. A method of identifying a contaminant is also disclosed.
Abstract:
A tin-based solder melt or aqueous tin plating bath composition comprising a source of tin and a stabilizing additive of chemical structure: wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from hydrogen atom, hydrocarbon groups R having at least one and up to twelve carbon atoms, groups OR′ wherein R′ is selected from hydrogen atom and hydrocarbon groups R, and halogen atoms, and wherein any two, three, or four of R1, R2, R3, R4, and R5 or any two, three, or four of R6, R7, R8, R9, and R10 are optionally interconnected to form a fused ring system; R11 and R12 are independently selected from hydrogen atom and hydrocarbon groups R; and r is either 0 or 1. Methods for coating and/or bonding metal substrates by use of the above-described solder compositions are also described.