公开(公告)号：US09472640B2

公开(公告)日：2016-10-18

申请号：US14698206

申请日：2015-04-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dechao Guo ,  Shu-Jen Han ,  Yu Lu ,  Keith Kwong Hon Wong

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L29/16 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L29/66045 ,  H01L21/02527 ,  H01L21/043 ,  H01L21/044 ,  H01L21/30604 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684 ,  H01L51/0048 ,  H01L51/0545

Abstract: Transistors with self-aligned source/drain regions and methods for making the same. The methods include forming a gate structure embedded in a recess in a substrate; removing substrate material around the gate structure to create self-aligned source and drain recesses; forming a channel layer over the gate structure and the source and drain recesses; and forming source and drain contacts in the source and drain recesses. The source and drain contacts extend above the channel layer.

Abstract translation: 具有自对准源极/漏极区域的晶体管及其制造方法。 所述方法包括形成嵌入衬底中的凹部中的栅极结构; 去除栅极结构周围的衬底材料以产生自对准的源极和漏极凹槽; 在栅极结构和源极和漏极凹槽上形成沟道层; 以及在源极和漏极凹槽中形成源极和漏极接触。 源极和漏极触点在沟道层上方延伸。