公开(公告)号：US20200176325A1

公开(公告)日：2020-06-04

申请号：US16780046

申请日：2020-02-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chanro PARK ,  Stan TSAI

IPC: H01L21/8234 ,  H01L21/768 ,  H01L29/06 ,  H01L29/45 ,  H01L27/088 ,  H01L21/321 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.

公开(公告)号：US20190279910A1

公开(公告)日：2019-09-12

申请号：US15914547

申请日：2018-03-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chanro PARK ,  Stan TSAI

IPC: H01L21/8234 ,  H01L21/768 ,  H01L21/311 ,  H01L21/321 ,  H01L27/088 ,  H01L29/45 ,  H01L29/06

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact structures and methods of manufacture. The method includes: recessing an isolation region between adjacent gate structures and below metallization overburden of source/drain metallization; planarizing the metallization overburden to a level of the adjacent gate structures; and forming source/drain contacts to the source/drain metallization, on sides of and extending above the adjacent gate structures.

公开(公告)号：US20180233580A1

公开(公告)日：2018-08-16

申请号：US15432710

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruilong XIE ,  John H. ZHANG ,  Stan TSAI

IPC: H01L29/66 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/768 ,  H01L21/311 ,  H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to semiconductor gate structures with gate height scaling and methods of manufacture. The method includes: forming at least one dummy gate structure with hardmask material; forming a plurality of materials over source and drain regions on sides of the at least one dummy gate structure; removing upper materials of the hardmask material such that a first material of the hardmask material remains on the dummy gate structure and in combination with a blocking material of the plurality of materials maintains a uniform gate height; forming a replacement gate structure by removing remaining material of the dummy gate structure to form a trench and depositing replacement gate material in the trench; and forming contacts to the source and drain regions.