公开(公告)号：US20140346648A1

公开(公告)日：2014-11-27

申请号：US13900976

申请日：2013-05-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Huy CAO ,  Huang LIU ,  Vijayalakshmi SESHACHALAM

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/505 ,  C23C16/515 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02211

Abstract: A low-K nitride film and a method of making are disclosed. Embodiments include forming a nitride film on a substrate by plasma enhanced chemical vapor deposition (PECVD) and periodically fluctuating a production of radicals during the PECVD based, at least in part, on plural cycles of a radiofrequency (RF) induced plasma.

Abstract translation: 公开了一种低K氮化物膜及其制造方法。 实施例包括通过等离子体增强化学气相沉积（PECVD）在衬底上形成氮化物膜，并且至少部分地基于射频（RF）感应等离子体的多个周期周期性地在PECVD期间波动自由基的产生。