公开(公告)号：US10353288B2

公开(公告)日：2019-07-16

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03B27/42 ,  G03F7/26 ,  G03F7/00 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US20190163054A1

公开(公告)日：2019-05-30

申请号：US15824293

申请日：2017-11-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vineet Sharma ,  Sohan S. Mehta ,  Craig D. Higgins ,  Sunil K. Singh ,  Feng Wang

IPC: G03F7/00 ,  G03F7/38

CPC classification number: G03F7/0035 ,  G03F7/38

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

公开(公告)号：US20190079408A1

公开(公告)日：2019-03-14

申请号：US15698775

申请日：2017-09-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sohan Singh Mehta ,  Mark C. Duggan ,  Sunil Kumar Singh ,  Robert Justin Morgan ,  SherJang Singh ,  Ravi Prakash Srivastava ,  Craig D. Higgins ,  Jason L. Behnke ,  Vineet Sharma

IPC: G03F7/32

Abstract: The disclosure is directed to a method for lithographic patterning. The method may include: exposing a photoresist to a radiant energy; developing the photoresist in a first developer, thereby creating an opening within the photoresist including sidewalls having a slant; and developing the photoresist in a second developer immediately after the developing of the photoresist in the first developer, thereby reducing the slant of the sidewalls of the opening. Where the photoresist is a positive tone development (PTD) photoresist, the first developer may include a positive developer, and the second developer may include a negative developer. Where the photoresist is a negative tone development (NTD) photoresist, the first developer may include a negative developer, and the second developer may include a positive developer.