公开(公告)号：US20190079408A1

公开(公告)日：2019-03-14

申请号：US15698775

申请日：2017-09-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sohan Singh Mehta ,  Mark C. Duggan ,  Sunil Kumar Singh ,  Robert Justin Morgan ,  SherJang Singh ,  Ravi Prakash Srivastava ,  Craig D. Higgins ,  Jason L. Behnke ,  Vineet Sharma

IPC: G03F7/32

Abstract: The disclosure is directed to a method for lithographic patterning. The method may include: exposing a photoresist to a radiant energy; developing the photoresist in a first developer, thereby creating an opening within the photoresist including sidewalls having a slant; and developing the photoresist in a second developer immediately after the developing of the photoresist in the first developer, thereby reducing the slant of the sidewalls of the opening. Where the photoresist is a positive tone development (PTD) photoresist, the first developer may include a positive developer, and the second developer may include a negative developer. Where the photoresist is a negative tone development (NTD) photoresist, the first developer may include a negative developer, and the second developer may include a positive developer.

公开(公告)号：US20190137863A1

公开(公告)日：2019-05-09

申请号：US15805179

申请日：2017-11-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Oktawian Sobieraj ,  Paul W. Ackmann ,  SherJang Singh

IPC: G03F1/62 ,  G03F7/20 ,  G03F1/22 ,  G03F1/84 ,  G03F1/64

CPC classification number: G03F1/62 ,  G03F1/22 ,  G03F1/64 ,  G03F1/84 ,  G03F7/2004

Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.

公开(公告)号：US09195132B2

公开(公告)日：2015-11-24

申请号：US14168396

申请日：2014-01-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  SherJang Singh ,  Uzodinma Okoroanyanwu ,  Obert R. Wood ,  Pawitter J. S. Mangat

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A lithography mask structure is provided, including: a substrate; at least one reflective layer over the substrate; and an absorber film stack over the at least one reflective layer, the absorber film stack including a plurality of first film layers of a first material and at least one second film layer of a second material. The second material is different from the first material, and the second film layer(s) is interleaved with the plurality of first film layers. In one embodiment, the total thickness of the absorber film stack is less than 50 nm. In another embodiment, the reflectivity of the absorber film stack is less than 2% for a pre-defined wavelength of EUV light. In a further embodiment, the second film layer(s) prevents the average crystallite size of the first film layers from exceeding the thickness of the first film layers.

Abstract translation: 提供光刻掩模结构，包括：基板; 衬底上的至少一个反射层; 以及在所述至少一个反射层上的吸收膜叠层，所述吸收膜叠层包括多个第一材料的第一膜层和至少一个第二材料的第二膜层。 第二材料与第一材料不同，并且第二膜层与多个第一膜层交错。 在一个实施例中，吸收膜叠层的总厚度小于50nm。 在另一个实施例中，对于预定波长的EUV光，吸收膜叠层的反射率小于2％。 在另一实施例中，第二膜层防止第一膜层的平均微晶尺寸超过第一膜层的厚度。

公开(公告)号：US20190258157A1

公开(公告)日：2019-08-22

申请号：US15902544

申请日：2018-02-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yulu Chen ,  Oktawian Sobieraj ,  SherJang Singh

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20 ,  H01L21/31

Abstract: Disclosed is a photolithography (e.g., extreme ultraviolet (EUV) photolithography) system that incorporates a photomask-pellicle apparatus with an angled pellicle. The apparatus includes a photomask structure and a pellicle structure that is mounted on the photomask structure. The pellicle is essentially transparent to a given-type radiation (e.g., EUV radiation), is essentially reflective to out-of-band (OOB) radiation, and is positioned at an angle relative to the photomask. When radiation is directed toward the photomask-pellicle apparatus during a photolithographic exposure process, beams that are reflected and diffracted off of the patterned surface of the photomask structure are directed toward a target semiconductor wafer and beams that are reflected and diffracted off of the pellicle are directed away from the target semiconductor wafer. Aiming the OOB radiation away from the target semiconductor wafer improves imaging quality by minimizing the negative impact of OOB radiation. Also disclosed is an associated photolithography method.

公开(公告)号：US20180299765A1

公开(公告)日：2018-10-18

申请号：US15485498

申请日：2017-04-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： SherJang Singh ,  Sunil K. Singh ,  Sohan S. Mehta

IPC: G03F1/24 ,  C23C16/02 ,  G03F1/54 ,  G03F1/52 ,  G03F1/46 ,  G03F1/80 ,  G03F1/60

Abstract: A reflective mask with an embedded absorber pattern is provided. The reflective mask may include a low thermal expansion material (LTEM) substrate. A pair of reflective stacks may be included, each reflective stack having a first respective top surface extending from the LTEM substrate to a first extent. A fill stack is between the pair of reflective stacks, the fill stack having a second top surface extending from the LTEM substrate to a second extent, the second extent being below the first extent of the pair of reflective stacks. An extended portion of each of the pair of reflective stacks is above the fill stack thereby forming a recess well between the pair of reflective stacks, the recess well having substantially vertical walls separated by the second top surface of the fill stack. An absorber layer lining the recess well.

公开(公告)号：US10401724B2

公开(公告)日：2019-09-03

申请号：US15805179

申请日：2017-11-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Oktawian Sobieraj ,  Paul W. Ackmann ,  SherJang Singh

IPC: G03F1/62 ,  G03F1/22 ,  G03F1/64 ,  G03F1/84 ,  G03F7/20

Abstract: An optical mask has a first pellicle attached. The optical mask is inspected with the first pellicle in place using first wavelengths of electromagnetic radiation. The first pellicle is replaced with a second pellicle. The first pellicle only allows the first wavelengths of electromagnetic radiation to pass, and the second pellicle allows second wavelengths that are shorter than the first wavelengths to pass. A photoresist is exposed using the optical mask with the second pellicle in place. The second pellicle is replaced with the first pellicle. The optical mask is again inspected with the first pellicle in place using the first wavelengths of electromagnetic radiation.