公开(公告)号：US20140113420A1

公开(公告)日：2014-04-24

申请号：US13658928

申请日：2012-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vidmantas Sargunas ,  Yayi Wei ,  Jeong Soo Kim ,  Seung Y. Kim

IPC: H01L21/8238

CPC classification number: H01L21/823821 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/66803

Abstract: One illustrative method disclosed herein includes forming a patterned photoresist implant mask that has an opening that is defined, at least partially, by a plurality of non-vertical sidewalls, wherein the implant mask covers one of an N-type FinFET or P-type FinFET device, while the other of the N-type FinFET or P-type FinFET device is exposed by the opening in the patterned photoresist implant mask, and performing at least one source/drain implant process through the opening in the patterned photoresist implant mask to form a doped source/drain implant region in at least one fin of the FinFET device exposed by the opening in the patterned photoresist implant mask.

Abstract translation: 本文公开的一种说明性方法包括形成具有至少部分由多个非垂直侧壁限定的开口的图案化光刻胶注入掩模，其中所述注入掩模覆盖N型FinFET或P型FinFET 器件，而N型FinFET或P型FinFET器件中的另一个由图案化的光致抗蚀剂注入掩模中的开口暴露，并且通过图案化的光致抗蚀剂植入掩模中的开口执行至少一个源极/漏极注入工艺以形成 在由图案化的光致抗蚀剂植入掩模中的开口暴露的FinFET器件的至少一个鳍中的掺杂源极/漏极注入区域。

公开(公告)号：US08912489B2

公开(公告)日：2014-12-16

申请号：US13783562

申请日：2013-03-04

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Yayi Wei

IPC: G03F7/20 ,  H01J37/30 ,  G03F1/70

CPC classification number: H01J37/3007 ,  G03F1/70

Abstract: A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam.

Abstract translation: 提供了在器件制造期间去除缺陷的过程，例如微桥接缺陷。 一方面，一种方法包括：在光刻处理之后获得晶片，并将该晶片暴露于至少一个电子束。 在另一方面，一种系统包括：在衬底经历光刻处理之后，选择具有微桥接缺陷的衬底; 准备用于暴露于至少一个电子束的衬底; 以及将所述衬底暴露于所述至少一个电子束。