公开(公告)号：US09947788B2

公开(公告)日：2018-04-17

申请号：US15019273

申请日：2016-02-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani Pandey ,  Pei Zhao ,  Baofu Zhu ,  Francis L. Benistant

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method includes forming a gate electrode structure above a channel region defined in a semiconductor material. The semiconductor material is recessed in a source/drain region. A first material is epitaxially grown in the source/drain region. The first material includes a dopant species having a first concentration. A diffusion blocking layer is formed in the source/drain region above the first material. A second material is epitaxially grown in the source/drain region above the diffusion blocking layer. The second material comprises the dopant species having a second concentration greater than the first concentration.

公开(公告)号：US10164099B2

公开(公告)日：2018-12-25

申请号：US15889367

申请日：2018-02-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani Pandey ,  Pei Zhao ,  Baofu Zhu ,  Francis L. Benistant

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66

Abstract: One illustrative device disclosed herein includes, among other things, a fin defined on a substrate. A gate electrode structure is positioned above the fin in a channel region. A source/drain region is defined in the fin. The source/drain region includes a first epitaxial semiconductor material. The first epitaxial semiconductor material includes a dopant species having a first concentration. A diffusion blocking layer is positioned above the first epitaxial semiconductor material. A second epitaxial semiconductor material is positioned above the diffusion blocking layer. The second epitaxial semiconductor material includes the dopant species having a second concentration greater than the first concentration.

公开(公告)号：US20180175198A1

公开(公告)日：2018-06-21

申请号：US15889367

申请日：2018-02-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani Pandey ,  Pei Zhao ,  Baofu Zhu ,  Francis L. Benistant

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: One illustrative device disclosed herein includes, among other things, a fin defined on a substrate. A gate electrode structure is positioned above the fin in a channel region. A source/drain region is defined in the fin. The source/drain region includes a first epitaxial semiconductor material. The first epitaxial semiconductor material includes a dopant species having a first concentration. A diffusion blocking layer is positioned above the first epitaxial semiconductor material. A second epitaxial semiconductor material is positioned above the diffusion blocking layer. The second epitaxial semiconductor material includes the dopant species having a second concentration greater than the first concentration.

公开(公告)号：US20170229578A1

公开(公告)日：2017-08-10

申请号：US15019273

申请日：2016-02-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shesh Mani Pandey ,  Pei Zhao ,  Baofu Zhu ,  Francis L. Benistant

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method includes forming a gate electrode structure above a channel region defined in a semiconductor material. The semiconductor material is recessed in a source/drain region. A first material is epitaxially grown in the source/drain region. The first material includes a dopant species having a first concentration. A diffusion blocking layer is formed in the source/drain region above the first material. A second material is epitaxially grown in the source/drain region above the diffusion blocking layer. The second material comprises the dopant species having a second concentration greater than the first concentration.