公开(公告)号：US09817927B2

公开(公告)日：2017-11-14

申请号：US14841037

申请日：2015-08-31

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Guo Xiang Ning ,  Yuping Ren ,  David Power ,  Lalit Shokeen ,  Chin Teong Lim ,  Paul W. Ackmann ,  Xiang Hu

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G06F17/5009 ,  G03F1/36 ,  G06F17/5081

Abstract: A method and apparatus for generating a final dielectric etch compensation table and a final hard mask etch compensation table for either OPC or MPC process flows are provided. Embodiments include performing an overlap pattern classification on a wafer; calibrating a dielectric etch bias or a hard mask etch bias based on the pattern classification; comparing either a CD overlap of a via layer with a metal layer and a CD overlap of the via layer with a lower connecting metal layer or a CD overlap of the metal layer with an upper connecting via layer and a CD overlap of the metal layer with the via layer against a criteria; outputting final dielectric etch compensation and hard mask etch compensation tables to either OPC or MPC process flows; and repeating the steps of calibrating, comparing, and outputting for either the via layer or metal layer remaining.

公开(公告)号：US20150006138A1

公开(公告)日：2015-01-01

申请号：US13932141

申请日：2013-07-01

Applicant: Globalfoundries Inc.

Inventor： Guo Xiang Ning ,  Fang Hong Gn ,  Paul Ackmann ,  Chin Teong Lim

IPC: G06F17/50

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: Approaches for simulating a photolithographic process are provided. Specifically, provided is an optical proximity correction (OPC) model that includes kernel parameters corresponding to inter-layer activity and an etch process for a connecting via of an integrated circuit (IC). A resultant intensity is determined for a corresponding plurality of process variations corresponding to the interlayer activity and the etch process. As such, the OPC model considers both interlay activity and etch process.

Abstract translation: 提供了用于模拟光刻工艺的方法。 具体地，提供了包括对应于层间活动的核参数和用于集成电路（IC）的连接通路的蚀刻处理的光学邻近校正（OPC）模型。 对于与层间活性和蚀刻工艺相对应的相应多个工艺变化确定合成强度。 因此，OPC模型考虑了interlay活动和蚀刻过程。