公开(公告)号：US10020383B2

公开(公告)日：2018-07-10

申请号：US14716938

申请日：2015-05-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jing Wan ,  Jer-Hueih(James) Chen ,  Cuiqin Xu ,  Padmaja Nagaiah

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/66 ,  H01L21/28 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L29/66795 ,  H01L21/28008 ,  H01L21/3083 ,  H01L21/76232 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.