公开(公告)号：US10312150B1

公开(公告)日：2019-06-04

申请号：US15919594

申请日：2018-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Fuad Al-Amoody ,  Jinping Liu ,  Joseph Kassim ,  Bharat Krishnan

IPC: H01L21/8234 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/308 ,  H01L29/78 ,  H01L21/475 ,  H01L29/66 ,  H01L29/06 ,  H01L21/762

Abstract: Methods of forming a fin-type field-effect transistor. A gate structure is formed that extends across a plurality of semiconductor fins. A spacer layer composed of a dielectric material is conformally deposited over the gate structure, the semiconductor fins, and a dielectric layer in gaps between the semiconductor fins. A protective layer is conformally deposited over the spacer layer. The protective layer over the dielectric layer in the gaps between the semiconductor fins is masked, and the protective layer is then removed from the gate structure and the semiconductor fins selective to the dielectric material of the spacer layer.