公开(公告)号：US10643927B1

公开(公告)日：2020-05-05

申请号：US16192999

申请日：2018-11-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Steven Shank ,  Ian McCallum-Cook ,  John Hall

IPC: H01L23/48 ,  H01L29/06 ,  H01L23/66 ,  H01L21/768 ,  H01L21/764

Abstract: Through-substrate vias (TSVs) extend through a high resistivity semiconductor substrate laterally spaced and isolated from an active device formed over the substrate by deep trench isolation (DTI) structures. The deep trench isolation structures may extend partially or entirely through the substrate, and may include an air gap. The deep trench isolation structures entirely surround the active device and the TSVs.

公开(公告)号：US10062711B2

公开(公告)日：2018-08-28

申请号：US15386507

申请日：2016-12-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven Shank ,  Alvin Joseph ,  Michel Abou-Khalil ,  Michael Zierak

IPC: H01L27/12 ,  H01L21/00 ,  H01L21/84 ,  H01L29/06 ,  H01L23/528 ,  H01L29/423 ,  H01L21/762 ,  H01L21/683

CPC classification number: H01L27/1203 ,  H01L21/6835 ,  H01L21/76283 ,  H01L21/84 ,  H01L29/0649 ,  H01L29/4238 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78696 ,  H01L2221/6835

Abstract: Wafers for fabrication of devices that include a body contact, device structures with a body contact, methods for forming a wafer that supports the fabrication of devices that include a body contact, and methods for forming a device structure that includes a body contact. The wafer includes a buried oxide layer and a semiconductor layer on the buried oxide layer. The semiconductor layer includes a section with a top surface and a plurality of islands projecting from the section of the semiconductor layer into the buried oxide layer. The section of the semiconductor layer is located vertically between the islands of the semiconductor layer and the top surface of the semiconductor layer.

公开(公告)号：US20180175064A1

公开(公告)日：2018-06-21

申请号：US15386507

申请日：2016-12-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven Shank ,  Alvin Joseph ,  Michel Abou-Khalil ,  Michael Zierak

IPC: H01L27/12 ,  H01L29/06 ,  H01L23/528 ,  H01L29/423 ,  H01L21/762 ,  H01L21/84 ,  H01L21/683

CPC classification number: H01L27/1203 ,  H01L21/6835 ,  H01L21/76283 ,  H01L21/84 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/4238 ,  H01L2221/6835

Abstract: Wafers for fabrication of devices that include a body contact, device structures with a body contact, methods for forming a wafer that supports the fabrication of devices that include a body contact, and methods for forming a device structure that includes a body contact. The wafer includes a buried oxide layer and a semiconductor layer on the buried oxide layer. The semiconductor layer includes a section with a top surface and a plurality of islands projecting from the section of the semiconductor layer into the buried oxide layer. The section of the semiconductor layer is located vertically between the islands of the semiconductor layer and the top surface of the semiconductor layer.

公开(公告)号：US09953831B1

公开(公告)日：2018-04-24

申请号：US15385949

申请日：2016-12-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Steven Shank ,  Randall Brault ,  Jay Burnham ,  John J. Ellis-Monaghan

IPC: H01L27/01 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762

CPC classification number: H01L21/02332 ,  H01L21/02362 ,  H01L21/7624 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/513 ,  H01L29/66628

Abstract: Device structures for field-effect transistors and methods of forming device structures for a field-effect transistor. A first dielectric layer is formed on a semiconductor layer and nitrided. A nitrogen-enriched layer is formed at a first interface between the first dielectric layer and the semiconductor layer. Another nitrogen-enriched layer is formed at a second interface between the semiconductor layer and a second dielectric layer. Device structures may include field-effect transistors that include one, both, and/or neither of the nitrogen-enriched layers.