公开(公告)号：US09159724B2

公开(公告)日：2015-10-13

申请号：US14161063

申请日：2014-01-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yan Wang ,  Yuansheng Ma ,  Jongwook Kye ,  Mahbub Rashed

IPC: H01L29/40 ,  H01L27/088 ,  H01L21/8234 ,  H01L27/02 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/088 ,  H01L21/76895 ,  H01L21/823475 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092

Abstract: An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region.

Abstract translation: 公开了一种使用扩散接触结构提供基于交叉耦合的设计的方法。 实施例包括在衬底上提供第一和第二栅极结构; 提供横跨所述第一栅极结构，所述第二栅极结构或其组合的栅极截止区域; 在第一栅极结构上提供第一栅极接触; 在所述第二栅极结构上提供第二栅极接触; 以及提供将所述第一栅极接触耦合到所述第二栅极接触的扩散接触结构，所述扩散接触结构在所述栅极切割区域内具有顶点。

公开(公告)号：US09142513B2

公开(公告)日：2015-09-22

申请号：US14645598

申请日：2015-03-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Mahbub Rashed ,  Yuansheng Ma ,  Irene Lin ,  Jason Stephens ,  Yunfei Deng ,  Yuan Lei ,  Jongwook K E ,  Roderick Augur ,  Shibly Ahmed ,  Subramani Kengeri ,  Suresh Venkatesan

IPC: H01L23/538 ,  H01L29/78 ,  H01L27/092 ,  H01L27/02

CPC classification number: H01L23/5386 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/5384 ,  H01L27/0207 ,  H01L27/0924 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.