公开(公告)号：US12211929B1

公开(公告)日：2025-01-28

申请号：US18663523

申请日：2024-05-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Anupam Dutta ,  John Pekarik ,  Vibhor Jain ,  V V S S Satyasuresh Choppalli ,  Rui Tze Toh ,  Oscar Restrepo

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises an intrinsic base including a first semiconductor layer, a collector including a second semiconductor layer, and an emitter including a third semiconductor layer. The first semiconductor layer, which comprises silicon-germanium, includes a first portion and a second portion adjacent to the first portion. The second semiconductor layer includes a portion on the first portion of the first semiconductor layer, and the third semiconductor layer includes a portion on the second portion of the first semiconductor layer. The structure further comprises a dielectric spacer laterally between the portion of the second semiconductor layer and the portion of the third semiconductor layer.

公开(公告)号：US20220062896A1

公开(公告)日：2022-03-03

申请号：US17006050

申请日：2020-08-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Vibhor Jain ,  Anthony Stamper ,  John Pekarik ,  John Ellis-Monaghan ,  Ramsey Hazbun

IPC: B01L3/00 ,  G01N21/05 ,  G01N21/85

Abstract: One illustrative device disclosed herein includes a semiconductor substrate, a channel that is at least partially defined by at least a portion of the semiconductor substrate, an input fluid reservoir and an output fluid reservoir, wherein the channel is in fluid communication with the input fluid reservoir and the output fluid reservoir. In this example, the device further includes a first radiation source operatively coupled to the substrate, wherein the first radiation source is adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent the channel.