公开(公告)号：US20240136400A1

公开(公告)日：2024-04-25

申请号：US18405621

申请日：2024-01-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander Derrickson ,  Vibhor Jain ,  Judson R. Holt ,  Jagar Singh ,  Mankyu Yang

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/735 ,  H01L29/737

CPC classification number: H01L29/0821 ,  H01L29/0649 ,  H01L29/0808 ,  H01L29/0817 ,  H01L29/1008 ,  H01L29/41708 ,  H01L29/735 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.

公开(公告)号：US20240021713A1

公开(公告)日：2024-01-18

申请号：US18373598

申请日：2023-09-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/737 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/735 ,  H01L29/6625 ,  H01L29/737 ,  H01L29/0808 ,  H01L29/41708 ,  H01L29/0821

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US11637181B2

公开(公告)日：2023-04-25

申请号：US17509327

申请日：2021-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Alvin J. Joseph ,  Alexander Derrickson ,  Judson R. Holt ,  John J. Pekarik

IPC: H01L29/08 ,  H01L29/735 ,  H01L29/66 ,  H01L29/417

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral bipolar transistors and methods of manufacture. The structure includes: an extrinsic base comprising semiconductor material; an intrinsic base comprising semiconductor material which is located below the extrinsic base; a polysilicon emitter on a first side of the extrinsic base; a raised collector on a second side of the extrinsic base; and sidewall spacers on the extrinsic base which separate the extrinsic base from the polysilicon emitter and the raised collector.

公开(公告)号：US20230061219A1

公开(公告)日：2023-03-02

申请号：US17509384

申请日：2021-10-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Haiting Wang ,  Alexander Derrickson ,  Jagar Singh ,  Vibhor Jain ,  Andreas Knorr ,  Alexander Martin ,  Judson R. Holt ,  Zhenyu Hu

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/08 ,  H01L29/417 ,  H01L29/737

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.

公开(公告)号：US20240194535A1

公开(公告)日：2024-06-13

申请号：US18080017

申请日：2022-12-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Venkatesh P. Gopinath ,  Navneet Jain ,  Hongru Ren ,  Alexander Derrickson ,  Jianwei Peng ,  Bipul C. Paul

IPC: H01L21/8234 ,  H01L21/768 ,  H01L29/423 ,  H01L29/49 ,  H10B63/00

CPC classification number: H01L21/823475 ,  H01L21/76895 ,  H01L29/42316 ,  H01L29/4933 ,  H10B63/34

Abstract: Structures that include field-effect transistors and methods of forming such structures. The structure comprises a substrate, a dielectric layer on the substrate, a first field-effect transistor including a first semiconductor layer over the dielectric layer and a first gate electrode, and a second field-effect transistor including a second semiconductor layer over the dielectric layer and a second gate electrode adjacent to the first gate electrode. The second semiconductor layer is connected to the first semiconductor layer, and the first and second semiconductor layers are positioned between the first gate electrode and the second gate electrode.

公开(公告)号：US20240147736A1

公开(公告)日：2024-05-02

申请号：US17974028

申请日：2022-10-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Venkatesh P. Gopinath ,  Alexander Derrickson ,  Hongru Ren

IPC: H01L27/24 ,  H01L23/48 ,  H01L45/00

CPC classification number: H01L27/2445 ,  H01L23/481 ,  H01L45/1206 ,  H01L45/1253 ,  H01L45/16

Abstract: Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a bipolar junction transistor including a base, a first terminal having a first raised semiconductor layer over the base, and a second terminal having a second raised semiconductor layer over the base. The first raised semiconductor layer is spaced in a lateral direction from the second raised semiconductor layer. The structure further comprises a resistive memory element including a first electrode, a second electrode, and a switching layer between the first electrode and the second electrode. The first electrode of the resistive memory element is coupled to the first terminal of the bipolar junction transistor.

公开(公告)号：US11916136B2

公开(公告)日：2024-02-27

申请号：US17739092

申请日：2022-05-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Arkadiusz Malinowski ,  Alexander Derrickson ,  Judson Holt

IPC: H01L29/73 ,  H01L29/735 ,  H01L21/265 ,  H01L21/324 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L21/26586 ,  H01L21/324 ,  H01L29/165 ,  H01L29/6625

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.

公开(公告)号：US11749727B2

公开(公告)日：2023-09-05

申请号：US17546200

申请日：2021-12-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Hong Yu ,  Alexander Derrickson

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/165 ,  H01L29/40 ,  H01L29/66 ,  H01L29/737

CPC classification number: H01L29/41708 ,  H01L29/1004 ,  H01L29/165 ,  H01L29/401 ,  H01L29/66242 ,  H01L29/7371

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer, a second base layer, a first terminal positioned between the first base layer and the second base layer, a second terminal, and a third terminal. The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.

公开(公告)号：US11710771B2

公开(公告)日：2023-07-25

申请号：US17524043

申请日：2021-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander Derrickson ,  Judson R. Holt ,  Haiting Wang ,  Jagar Singh ,  Vibhor Jain

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

CPC classification number: H01L29/1008 ,  H01L29/0808 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/6656 ,  H01L29/66242 ,  H01L29/66553 ,  H01L29/735 ,  H01L29/737

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.

公开(公告)号：US20240297242A1

公开(公告)日：2024-09-05

申请号：US18660956

申请日：2024-05-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Judson R. Holt ,  Alexander Derrickson

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/165 ,  H01L29/6625

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.