公开(公告)号：US09627197B2

公开(公告)日：2017-04-18

申请号：US14687684

申请日：2015-04-15

申请人： GLOBALWAFERS CO., LTD. ,  Miin-Jang Chen

发明人： Miin-Jang Chen ,  Huan-Yu Shih ,  Wen-Ching Hsu ,  Ray-Ming Lin

IPC分类号： H01L21/02 ,  H01L31/036 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12

CPC分类号： H01L21/0254 ,  H01L21/0262 ,  H01L31/036 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/32

摘要： The invention provides a composite substrate, a semiconductor device including such composite substrate, and a method of making the same. In particular, the composite substrate of the invention includes a nitride-based single crystal layer transformed from a nitride-based poly-crystal layer, which has a specific thickness of approximately between 2 nm and 100 nm.