LASER SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:US20250062587A1

    公开(公告)日:2025-02-20

    申请号:US18939232

    申请日:2024-11-06

    Inventor: Takayuki OSANAI

    Abstract: A laser system includes a pump laser device outputting pump laser light having a first wavelength, a signal laser device outputting signal laser light having a second wavelength, and an amplification system including optical parametric crystals outputting amplification light. The optical parametric crystals include first and second optical parametric crystals. The amplification system is arranged such that beam waist positions of first amplification light and the pump laser light coincide with each other, and that the first amplification light and the pump laser light are coaxially incident on the second optical parametric crystal; and includes a first beam diameter adjustment optical system in which a ratio of a beam waist diameter of the pump laser light to that of the first amplification light is set larger than a ratio of a beam waist diameter of the pump laser light to that of the signal laser light.

    EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:US20210307150A1

    公开(公告)日:2021-09-30

    申请号:US17160486

    申请日:2021-01-28

    Abstract: An extreme ultraviolet light generation apparatus includes a chamber device, a concentrating mirror, an exhaust port, and a central gas supply port. The exhaust port is formed at the chamber device and is formed on the side lateral to a focal line and opposite to the reflection surface with respect to the plasma generation region. The central gas supply port is formed on the side opposite to the exhaust port with respect to the plasma generation region on the supply line passing through the exhaust port, the plasma generation region, and an inner side of a peripheral portion of the reflection surface. The central gas supply port supplies the gas toward the exhaust port along the supply line through the plasma generation region.

    EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:US20220146943A1

    公开(公告)日:2022-05-12

    申请号:US17492280

    申请日:2021-10-01

    Abstract: An extreme ultraviolet light generation system may include a chamber, a first partition wall having at least one opening which provides communication between a first space and a second space, an EUV light concentrating mirror located in the second space and configured to concentrate extreme ultraviolet light generated in a plasma generation region located in the first space, a first gas supply port formed at the chamber, and a gas exhaust port formed in the first partition wall, a distance between the center of the plasma generation region and an edge of the at least one opening being equal to or more than a stop distance LSTOP [mm] calculated by the following equation. LSTOP=272.8·EVG0.4522·P−1 EAVG [eV] representing average kinetic energy of ions generated in the plasma generation region and P [Pa] representing a gas pressure inside the first partition wall

    CHAMBER DEVICE, EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD

    公开(公告)号:US20210289611A1

    公开(公告)日:2021-09-16

    申请号:US17156376

    申请日:2021-01-22

    Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.

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