公开(公告)号：US10347622B2

公开(公告)日：2019-07-09

申请号：US15398946

申请日：2017-01-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： You Li ,  Manjunatha Prabu ,  Mujahid Muhammad ,  John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Souvick Mitra

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/74

Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.

公开(公告)号：US20160197080A1

公开(公告)日：2016-07-07

申请号：US15067307

申请日：2016-03-11

Applicant: GlobalFoundries Inc.

Inventor： John B. Campi, JR. ,  Robert J. Gauthier, JR. ,  Junjun Li ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L27/0928 ,  H01L21/761 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/092 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7816 ,  H01L29/7835

Abstract: Disclosed are semiconductor structures. Each semiconductor structure can comprise a substrate and at least one laterally double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) on the substrate. Each LDMOSFET can have a fully-depleted deep drain drift region (i.e., a fully depleted deep ballast resistor region) for providing a relatively high blocking voltage. Different configurations for the drain drift regions are disclosed and these different configurations can also vary as a function of the conductivity type of the LDMOSFET. Additionally, each semiconductor structure can comprise an isolation band positioned below the LDMOSFET and an isolation well positioned laterally around the LDMOSFET and extending vertically to the isolation band such that the LDMOSFET is electrically isolated from both a lower portion of the substrate and any adjacent devices on the substrate.

公开(公告)号：US20180190644A1

公开(公告)日：2018-07-05

申请号：US15398946

申请日：2017-01-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： You Li ,  Manjunatha Prabu ,  Mujahid Muhammad ,  John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Souvick Mitra

IPC: H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L21/8222

CPC classification number: H01L27/0262 ,  H01L27/0641 ,  H01L29/0653 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/7428 ,  H01L29/7436

Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.