公开(公告)号：US11798948B2

公开(公告)日：2023-10-24

申请号：US17496296

申请日：2021-10-07

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Kaustubh Shanbhag ,  Eric S. Kozarsky ,  George R. Mulfinger ,  Jianwei Peng

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/762 ,  H01L29/808

CPC分类号： H01L27/1203 ,  H01L21/7624 ,  H01L21/84 ,  H01L29/808

摘要： The present disclosure relates to semiconductor structures and, more particularly, to semiconductor devices with a shared common backside well and methods of manufacture. The structure includes: adjacent gate structures over a semiconductor substrate; a common well in the semiconductor substrate under the adjacent gate structures; a deep trench isolation structure extending through the common well between the adjacent gate structures; and a shared diffusion region between the adjacent gate structures.

公开(公告)号：US12020937B2

公开(公告)日：2024-06-25

申请号：US17701759

申请日：2022-03-23

申请人： GlobalFoundries U.S. Inc.

发明人： Jianwei Peng ,  Hong Yu ,  Man Gu ,  Eric S. Kozarsky

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/84 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L21/32155 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/45 ,  H01L29/4933

摘要： Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.

公开(公告)号：US20230307238A1

公开(公告)日：2023-09-28

申请号：US17701759

申请日：2022-03-23

申请人： GlobalFoundries U.S. Inc.

发明人： Jianwei Peng ,  Hong Yu ,  Man Gu ,  Eric S. Kozarsky

IPC分类号： H01L21/28 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L21/285 ,  H01L21/3215 ,  H01L21/84

CPC分类号： H01L21/28052 ,  H01L27/1203 ,  H01L29/45 ,  H01L29/4933 ,  H01L21/28518 ,  H01L21/32155 ,  H01L21/84

摘要： Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.

公开(公告)号：US20230112377A1

公开(公告)日：2023-04-13

申请号：US17496296

申请日：2021-10-07

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Kaustubh Shanbhag ,  Eric S. Kozarsky ,  George R. Mulfinger ,  Jianwei Peng

IPC分类号： H01L27/12 ,  H01L21/84

摘要： The present disclosure relates to semiconductor structures and, more particularly, to semiconductor devices with a shared common backside well and methods of manufacture. The structure includes: adjacent gate structures over a semiconductor substrate; a common well in the semiconductor substrate under the adjacent gate structures; a deep trench isolation structure extending through the common well between the adjacent gate structures; and a shared diffusion region between the adjacent gate structures.