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公开(公告)号:US20230261062A1
公开(公告)日:2023-08-17
申请号:US17671879
申请日:2022-02-15
Applicant: GlobalFoundries U.S. Inc.
Inventor: Uppili Raghunathan , Vibhor Jain , Sebastian Ventrone , Johnatan Kantarovsky , Yves Ngu
IPC: H01L29/40 , H01L29/735 , H01L29/06 , H01L29/423
CPC classification number: H01L29/407 , H01L29/735 , H01L29/0646 , H01L29/423 , H01L29/401
Abstract: Structures with an isolation region and fabrication methods for a structure having an isolation region. The structure includes a semiconductor substrate, a first isolation region surrounding a portion of the semiconductor substrate, a device in the portion of the semiconductor substrate, and a second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.
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公开(公告)号:US11054854B1
公开(公告)日:2021-07-06
申请号:US17032027
申请日:2020-09-25
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor: Sebastian T. Ventrone , Johnatan Kantarovsky
Abstract: Embodiments of the disclosure provide systems and methods to operate a logic circuit with non-deterministic clock edge variations. A system may include a clock coupled to a logic circuit, the logic circuit having a set of source latches coupled to a set of capture latches through a set of logic cones. The clock includes a fixed clock component configured to generate a clock signal having a first clock edge, and a jitter clock component coupled to the fixed clock component and configured to modify the clock signal to have a second clock edge based on a non-deterministic value. The clock transmits the clock signal with the second clock edge to drive the set of source latches and the set of capture latches of the logic circuit. A clock controller coupled to the jitter clock component generates the non-deterministic value.
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公开(公告)号:US12159910B2
公开(公告)日:2024-12-03
申请号:US17671879
申请日:2022-02-15
Applicant: GlobalFoundries U.S. Inc.
Inventor: Uppili Raghunathan , Vibhor Jain , Sebastian Ventrone , Johnatan Kantarovsky , Yves Ngu
IPC: H01L29/40 , H01L29/06 , H01L29/423 , H01L29/735
Abstract: Structures with an isolation region and fabrication methods for a structure having an isolation region. The structure includes a semiconductor substrate, a first isolation region surrounding a portion of the semiconductor substrate, a device in the portion of the semiconductor substrate, and a second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.
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