公开(公告)号：US20240304616A1

公开(公告)日：2024-09-12

申请号：US18118317

申请日：2023-03-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Xuelian ZHU ,  Navneet K. JAIN ,  Juhan KIM ,  James P. MAZZA ,  Jia ZENG ,  David C. PRITCHARD ,  Mahbub RASHED

IPC: H01L27/06 ,  H01Q1/38 ,  H01Q1/48

CPC classification number: H01L27/0617 ,  H01Q1/38 ,  H01Q1/48

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.

公开(公告)号：US20230268335A1

公开(公告)日：2023-08-24

申请号：US17679655

申请日：2022-02-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Juhan KIM ,  Sangmoon J. KIM ,  Mahbub RASHED ,  Navneet K. JAIN

IPC: H01L27/02

CPC classification number: H01L27/0207

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to cell layouts in semiconductor structures and methods of manufacture. A structure includes: a plurality of abutting cells each of which include transistors with gate structures having diffusion regions; a contact spanning across abutting cells of the plurality of abutting cells and contacting to the diffusion regions of separate cells of the abutting cells; and a continuous active region spanning across the plurality of abutting cells, wherein the continuous active region includes a drain-source abutment with L-shape construct, a source-source abutment with U-shape construct, and a drain-drain abutment with a filler cell located between a drain-drain abutment.