公开(公告)号：US20250040167A1

公开(公告)日：2025-01-30

申请号：US18225907

申请日：2023-07-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Navneet K. JAIN ,  Romain H. A. FEUILLETTE ,  David C. PRITCHARD ,  James P. MAZZA ,  Hong YU

IPC: H01L29/775 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate-all-around field effect transistors and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding the plurality of semiconductor nanosheets; a conductive material between the plurality of semiconductor nanosheets and the plurality of gate structures; an inner sidewall spacer adjacent to each of the plurality of gate structures and conductive material; and source/drain regions on opposing sides of the plurality of gate structures, separated therefrom by the inner sidewall spacer.

公开(公告)号：US20240304616A1

公开(公告)日：2024-09-12

申请号：US18118317

申请日：2023-03-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Xuelian ZHU ,  Navneet K. JAIN ,  Juhan KIM ,  James P. MAZZA ,  Jia ZENG ,  David C. PRITCHARD ,  Mahbub RASHED

IPC: H01L27/06 ,  H01Q1/38 ,  H01Q1/48

CPC classification number: H01L27/0617 ,  H01Q1/38 ,  H01Q1/48

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.