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公开(公告)号：US20240111096A1
公开(公告)日：2024-04-04
申请号：US17958777
申请日：2022-10-03
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng BIAN , Sunoo KIM , Edward W. KIEWRA
CPC classification number: G02B6/1228 , G02B6/13 , G03F7/0005
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to hybrid edge couplers with voids and methods of manufacture. The structure includes: a dielectric material; at least one waveguide structure embedded within the dielectric material; and at least one airgap within the dielectric material and extending along a length of the at least one waveguide structure.
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