公开(公告)号：US20220029032A1

公开(公告)日：2022-01-27

申请号：US16935854

申请日：2020-07-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Mark D. LEVY ,  Edward W. KIEWRA ,  Siva P. ADUSUMILLI ,  John J. ELLIS-MONAGHAN

IPC: H01L29/868 ,  H01L29/06 ,  H01L29/66 ,  H01L31/107

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: a spiral fin structure comprising semiconductor substrate material and dielectric material; a photosensitive semiconductor material over sidewalls and a top surface of the spiral fin structure, the photosensitive semiconductor material positioned to capture laterally emitted incident light; a doped semiconductor material above the photosensitive semiconductor material; and contacts electrically contacting the semiconductor substrate material and the doped semiconductor material from a top surface thereof.

公开(公告)号：US20240111096A1

公开(公告)日：2024-04-04

申请号：US17958777

申请日：2022-10-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng BIAN ,  Sunoo KIM ,  Edward W. KIEWRA

IPC: G02B6/122 ,  G02B6/13 ,  G03F7/00

CPC classification number: G02B6/1228 ,  G02B6/13 ,  G03F7/0005

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to hybrid edge couplers with voids and methods of manufacture. The structure includes: a dielectric material; at least one waveguide structure embedded within the dielectric material; and at least one airgap within the dielectric material and extending along a length of the at least one waveguide structure.