公开(公告)号：US20170249987A1

公开(公告)日：2017-08-31

申请号：US15500074

申请日：2014-11-14

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yoocharn JEON ,  James S. IGNOWSKI

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G06F13/1668 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0023 ,  G11C27/024 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2013/0057 ,  G11C2213/77

Abstract: A memory controller includes a voltage driver and a voltage comparator. The voltage driver applies a variable voltage to a selected line of a crossbar array to determine a first measured voltage that drives a first read current through a selected memory cell of the crossbar array. The voltage driver applies the variable voltage to the selected line to determine a second measured voltage that drives a second read current through the selected memory cell. The voltage comparator then determines a voltage difference between the first measured voltage and the second measured voltage and to compare the voltage difference with a reference voltage difference to determine a state of the selected memory cell. The crossbar array comprises a plurality of row lines, a plurality of column lines, and a plurality of memory cells. Each memory cell is coupled between a unique combination of one row line and one column line.