公开(公告)号：US20180108410A1

公开(公告)日：2018-04-19

申请号：US15566867

申请日：2015-05-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Luke Whitaker ,  Emmanuelle J. Merced Grafals ,  Martin Foltin

IPC: G11C13/00

CPC classification number: G11C13/0064 ,  G11C11/56 ,  G11C13/0069 ,  G11C2013/005 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/009 ,  G11C2013/0092

Abstract: An example device in accordance with an aspect of the present disclosure includes at least one current comparator, a plurality of threshold currents, and a controller. The current comparator is to compare a memristor current to a plurality of threshold currents. The controller is to set a desired memristance state of a memristor according to a memristance feedback tuning loop based on a plurality of threshold levels. The controller is to apply positive and negative voltages to the memristor during the feedback tuning loop to achieve the desired memristance state of the memristor.

公开(公告)号：US09812197B2

公开(公告)日：2017-11-07

申请号：US15316060

申请日：2014-10-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Luke Whitaker

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0026 ,  G11C2207/002

Abstract: One example provides a device including a first transistor having a source-drain path electrically coupled between a first node and a second node. The device includes an operational amplifier having an output electrically coupled to a gate of the first transistor. The operational amplifier controls the first transistor to maintain a predetermined voltage on the first node. A first current source adds a current at the first node and a second current source subtracts the current at the second node.

公开(公告)号：US10157668B2

公开(公告)日：2018-12-18

申请号：US15566867

申请日：2015-05-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Luke Whitaker ,  Emmanuelle J. Merced Grafals ,  Martin Foltin

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

Abstract: An example device in accordance with an aspect of the present disclosure includes at least one current comparator, a plurality of threshold currents, and a controller. The current comparator is to compare a memristor current to a plurality of threshold currents. The controller is to set a desired memristance state of a memristor according to a memristance feedback tuning loop based on a plurality of threshold levels. The controller is to apply positive and negative voltages to the memristor during the feedback tuning loop to achieve the desired memristance state of the memristor.

公开(公告)号：US20170110187A1

公开(公告)日：2017-04-20

申请号：US15316060

申请日：2014-10-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Luke Whitaker

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/0026 ,  G11C2207/002

Abstract: One example provides a device including a first transistor having a source-drain path electrically coupled between a first node and a second node. The device includes an operational amplifier having an output electrically coupled to a gate of the first transistor. The operational amplifier controls the first transistor to maintain a predetermined voltage on the first node. A first current source adds a current at the first node and a second current source subtracts the current at the second node.