公开(公告)号：US10074695B2

公开(公告)日：2018-09-11

申请号：US15500084

申请日：2014-12-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Jianhua Yang ,  Stanley Williams ,  Max Zhang ,  Zhiyong Li

IPC: H01L47/00 ,  H01L27/26

CPC classification number: H01L27/26 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L47/005

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.

公开(公告)号：US10482940B2

公开(公告)日：2019-11-19

申请号：US16062578

申请日：2015-12-17

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Miao Hu ,  John Paul Strachan ,  Zhiyong Li ,  Stanley Williams

IPC: G11C11/00 ,  G11C11/16 ,  G11C13/00

Abstract: Example implementations of the present disclosure relate to improved computational accuracy in a crossbar array. An example system may include a crossbar array, having a plurality of memory elements at junctions, usable in performance of computations. The example system may further include a calculate engine to calculate ideal conductance of memory elements at a plurality of junctions of the crossbar array and a determine engine to determine conductance of the memory elements at the plurality of junctions of the crossbar array. An adjust engine of the example system may be used to adjust conductance of at least one memory element to improve computational accuracy by reduction of a difference between the ideal conductance and the determined conductance of the at least one memory element.