公开(公告)号：US20160343431A1

公开(公告)日：2016-11-24

申请号：US15113908

申请日：2014-01-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gregg B. Lesartre ,  Gary Gibson ,  Erik Ordentlich ,  Yoocham Jeon

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/77 ,  H01L27/2463

Abstract: A device includes a cross-point array and an access circuit to access subsets of memory elements respectively corresponding to encoded blocks of data. For each of the subsets of memory elements, a row or a column of the cross-point array that includes a first memory element in the subset and a second memory element in the subset further includes a third memory element that is between the first and second memory elements along the row or column and is in one of the subsets corresponding to another of the encoded blocks.

Abstract translation: 一种设备包括交叉点阵列和访问电路，以访问分别对应于编码的数据块的存储器元件的子集。 对于存储器元件的每个子集，包括子集中的第一存储器元件和该子集中的第二存储器元件的交叉点阵列的行或列还包括位于第一和第二存储器元件之间的第三存储器元件 沿着行或列的存储器元件，并且在对应于另一编码块的子集之一中。

公开(公告)号：US09716224B2

公开(公告)日：2017-07-25

申请号：US15114973

申请日：2014-03-07

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  Richard Henze ,  Warren Jackson ,  Yoocham Jeon

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0095 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.