公开(公告)号：US20240134247A1

公开(公告)日：2024-04-25

申请号：US17972927

申请日：2022-10-24

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： YUAN YUAN ,  YIWEI PENG ,  STANLEY CHEUNG ,  ZHIHONG HUANG

IPC: G02F1/35 ,  G02F1/355 ,  G02F1/365

CPC classification number: G02F1/3517 ,  G02F1/3503 ,  G02F1/3556 ,  G02F1/365 ,  H01S5/3412

Abstract: Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.

公开(公告)号：US20210391488A1

公开(公告)日：2021-12-16

申请号：US16902135

申请日：2020-06-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： ZHIHONG HUANG ,  DI LIANG ,  YUAN YUAN

IPC: H01L31/105 ,  H01L31/028 ,  H01L31/18 ,  H01L27/144 ,  H04B10/66

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

公开(公告)号：US20210013356A1

公开(公告)日：2021-01-14

申请号：US16569617

申请日：2019-09-12

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： ZHIHONG HUANG ,  XIAOGE ZENG ,  WAYNE VICTOR SORIN

IPC: H01L31/107 ,  H01L31/02 ,  G02B6/42

Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned. Thus, by adjusting the Q-factor, the resonant cavity photodetector structure can be tuned to achieve a desirable performance.

公开(公告)号：US20240231180A9

公开(公告)日：2024-07-11

申请号：US17972927

申请日：2022-10-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： YUAN YUAN ,  YIWEI PENG ,  STANLEY CHEUNG ,  ZHIHONG HUANG

IPC: G02F1/35 ,  G02F1/355 ,  G02F1/365

CPC classification number: G02F1/3517 ,  G02F1/3503 ,  G02F1/3556 ,  G02F1/365 ,  H01S5/3412

Abstract: Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.