公开(公告)号：US20240130253A1

公开(公告)日：2024-04-18

申请号：US18539657

申请日：2023-12-14

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Ping MA ,  Xiang LI

IPC: H10N70/20 ,  G11C13/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  G11C13/0004 ,  H10N70/063 ,  H10N70/826 ,  H10N70/841

Abstract: An example phase change memory, as well as an electronic device comprising an example phase change memory, include a plurality of phase change memory cells. Each of the plurality of phase change memory cells includes a first electrode, a phase change body, and a second electrode, which are sequentially arranged in a first direction. The phase change body has a first end face facing the first electrode and a second end face facing the second electrode. The phase change body further includes a convergence portion, and the convergence portion is located between the first end face and the second end face, where a sectional area of the convergence portion in a direction perpendicular to the first direction is relatively smaller than an area of the first end face and an area of the second end face. A preparation method for a phase change memory is also provided.

公开(公告)号：US20220180351A1

公开(公告)日：2022-06-09

申请号：US17438346

申请日：2020-03-06

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yun ZHOU ,  Yongwei WANG ,  Xiang LI ,  Hongjian WANG

IPC: G06Q20/32 ,  G06K7/14 ,  G06K7/10

Abstract: This application provides a communications system (100) for automatically selecting an NFC emulation card, which includes an NFC card reader (102) and an electronic device (101). The NFC card reader (102) sends third query information which includes first identification information and a service type of an emulation card. The electronic device (101) determines whether a first emulation card exists. When determining that the first emulation card exists, the electronic device (101) determines whether a second emulation card exists. When determining that the second emulation card exists, the electronic device (101) sends fourth response information which carries second identification information. The NFC card reader (102) sends card selection instruction information. The electronic device (101) receives the card selection instruction information, and sends card selection response information. By using the foregoing technical solution, the electronic device (101) can automatically select a corresponding emulation card, thereby improving NFC payment efficiency.

公开(公告)号：US20200272322A1

公开(公告)日：2020-08-27

申请号：US16650264

申请日：2017-09-25

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Jinpeng ZHU ,  Kui WANG ,  Xiang LI ,  Zongfang LIN

IPC: G06F3/0488 ,  G06F3/0482 ,  G06F3/0481 ,  G06F16/25 ,  G06F9/451

Abstract: This application provides a terminal interface display method and a terminal. A specific solution includes: determining, by a terminal, a frequently used touch area on a first side of the terminal in response to a first gesture input by a user on a first interface, where the first gesture is a gesture input by a finger on a first side of the user, the frequently used touch area is a touch area that is on a terminal interface and that has undergone user operation whose frequency or quantity of times is greater than a first threshold, and the first interface includes at least two application icons; and displaying, by the terminal, at least one frequently used application icon of the at least two application icons in the frequently used touch area on the first side.

公开(公告)号：US20240114808A1

公开(公告)日：2024-04-04

申请号：US18533855

申请日：2023-12-08

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Xin CHEN ,  Xiang LI

IPC: H10N70/20 ,  G11C13/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  G11C13/0004 ,  H10N70/023 ,  H10N70/063 ,  H10N70/821 ,  H10N70/841 ,  H10N70/8828

Abstract: Examples of phase-change arrays, phase-change memories, and electronic devices are described. In one example, a phase-change storage array includes a number of phase-change storage units, each of which includes a phase-change thin film. The phase-change thin film includes a phase-change material layer and a heterojunction layer, and the phase-change material layer is in contact with the heterojunction layer. The phase-change material layer is formed by using a phase-change material, and the heterojunction layer is formed by using a heterojunction material. A lattice mismatch degree between the heterojunction material and the phase-change material is less than or equal to 20%, a contact crystal surface of the heterojunction material and a contact crystal surface of the phase-change material have a same lattice angle, and a melting point of the heterojunction material is greater than a melting point of the phase-change material.