Process for the preparation of silicon nitride
    4.
    发明授权
    Process for the preparation of silicon nitride 失效
    制备氮化硅的方法

    公开(公告)号:US5075091A

    公开(公告)日:1991-12-24

    申请号:US409275

    申请日:1989-09-19

    IPC分类号: C01B21/068

    CPC分类号: C01B21/0685

    摘要: The process of preparing silicon nitride is improved by reacting silicon-oxygen compounds and a carbon-containing material in an ammonia or ammonia/nitrogen atmosphere at 1300.degree. to 1600.degree. C.

    摘要翻译: 通过使硅 - 氧化合物和含碳材料在氨或氨/氮气氛中在1300°至1600℃下反应来提高氮化硅的制备工艺。