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    Process for forming a quantum-dot particle layer on a substrate
    1.
    发明授权
    Process for forming a quantum-dot particle layer on a substrate 有权
    在基板上形成量子点粒子层的工艺

    公开(公告)号：US07935388B2

    公开(公告)日：2011-05-03

    申请号：US12494706

    申请日：2009-06-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

    摘要： A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.

    摘要翻译： 用于制造量子点元件的方法利用反应室来蒸发或溅射基板上的至少一个电极层或至少一个缓冲层。 基板支撑基座位于反应室内部，用于固定基板。 雾化器具有气体入口和样品入口。 更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。 量子点元件的制造方法形成了具有均匀分布的量子点的量子点层，并且将同时形成量子点层，缓冲层和电极层的工序集成在一起。

    Method of manufacturing a quantum-dot element
    2.
    发明授权
    Method of manufacturing a quantum-dot element 有权
    量子点元件的制造方法

    公开(公告)号：US07303937B2

    公开(公告)日：2007-12-04

    申请号：US11187829

    申请日：2005-07-25

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

    摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.

    摘要翻译： 公开了一种制造量子点元件的方法。 该方法包括以下步骤。 首先，提供具有至少一个雾化器和基板支撑基底的沉积室。 雾化器连接到气体入口和样品入口。 然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。 同时，将基板放置在沉积室中的基板支撑基底上。 最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，其随后沉积在沉积室中的基底上。 由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。

    Method for doping quantum dots
    4.
    发明授权
    Method for doping quantum dots 有权
    掺杂量子点的方法

    公开(公告)号：US07192850B2

    公开(公告)日：2007-03-20

    申请号：US11024801

    申请日：2004-12-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    IPC分类号： H01L21/00

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C23C18/08 ,  H01L21/02409 ,  H01L21/02439 ,  H01L21/0256 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  Y10S977/774

    摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

    摘要翻译： 公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。 本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

    Method for doping quantum dots
    5.
    发明申请
    Method for doping quantum dots 有权
    掺杂量子点的方法

    公开(公告)号：US20050287691A1

    公开(公告)日：2005-12-29

    申请号：US11024801

    申请日：2004-12-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    IPC分类号： C23C18/08 ,  H01L21/00 ,  H01L21/22 ,  H01L21/368

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C23C18/08 ,  H01L21/02409 ,  H01L21/02439 ,  H01L21/0256 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  Y10S977/774

    摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II-VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

    摘要翻译： 公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。 本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

    Apparatus for manufacturing a quantum-dot element
    8.
    发明申请
    Apparatus for manufacturing a quantum-dot element 审中-公开
    用于制造量子点元件的装置

    公开(公告)号：US20060289853A1

    公开(公告)日：2006-12-28

    申请号：US11187828

    申请日：2005-07-25

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L31/00

    CPC分类号： C23C14/22 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/6715

    摘要： An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.

    摘要翻译： 公开了一种用于制造量子点元件的装置。 该装置包括用于在衬底上蒸发或溅射至少一个电极层或至少一个缓冲层的反应室。 基板支撑基座位于反应室内部，用于固定基板。 雾化器具有气体入口和样品入口。 更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。 本发明的装置可以形成具有均匀分布的量子点的量子点层，并将在量子点层，缓冲层和电极层的形成过程集成在一起。 因此，可以显着提高生产元件的质量。

    Method for manufacturing a quantum-dot element
    9.
    发明申请
    Method for manufacturing a quantum-dot element 有权
    量子点元件制造方法

    公开(公告)号：US20060046330A1

    公开(公告)日：2006-03-02

    申请号：US11187829

    申请日：2005-07-25

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

    摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.

    摘要翻译： 公开了一种制造量子点元件的方法。 该方法包括以下步骤。 首先，提供具有至少一个雾化器和基板支撑基底的沉积室。 雾化器连接到气体入口和样品入口。 然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。 同时，将基板放置在沉积室中的基板支撑基底上。 最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，随后沉积在沉积室中的基底上。 由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。