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    Nanowires and method for making the same
    3.
    发明申请
    Nanowires and method for making the same 有权
    纳米线和制作方法

    公开(公告)号：US20070155173A1

    公开(公告)日：2007-07-05

    申请号：US11507448

    申请日：2006-08-22

    申请人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    发明人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    IPC分类号： H01L21/44

    CPC分类号： C30B29/60 ,  C30B7/00 ,  C30B29/46 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/813 ,  Y10S977/824

    摘要： A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

    摘要翻译： 公开了制备纳米线的方法，其包括以下步骤：（a）提供含有IIB族元素的第一前体溶液和含有VIA族元素的第二前体溶液; （b）混合和加热第一前体溶液和第二前体溶液以形成混合溶液; 和（c）冷却混合溶液并过滤混合溶液以获得纳米线。 第一前体溶液包括IIB族元素和表面活性剂的化合物。 第二前体溶液包括VIA族元素的化合物。 此外，表面活性剂是具有芳香族基团的有机酸或其盐。

    Nanocrystal and photovoltaic device comprising the same
    4.
    发明申请
    Nanocrystal and photovoltaic device comprising the same 审中-公开
    纳米晶体和包含其的光电器件

    公开(公告)号：US20070151597A1

    公开(公告)日：2007-07-05

    申请号：US11515031

    申请日：2006-09-05

    申请人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    发明人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0352 ,  B82Y30/00 ,  H01L31/1828 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/422 ,  H01L51/426 ,  Y02E10/543 ,  Y02E10/549 ,  Y02P70/521

    摘要： A nanocrystal with high light absorption efficiency and a broad absorption spectrum, and a photovoltaic device comprising the nanocrystal are disclosed. The nanocrystal of the present invention comprises a core, a first shell grown and formed on the surface of the core, and a second shell grown and formed on the surface of the core or the surface of the first shell. Besides, the core, the first shell, and the second shell are a low energy gap material, a middle energy gap material, and a high energy gap material, respectively. Therefore, the nanocrystal has a great absorption in the ultraviolet range, the visible light range, and the infrared range; and the solar spectrum can be converted effectively to improve the light conversion efficiency thereof.

    摘要翻译： 公开了具有高光吸收效率和宽吸收光谱的纳米晶体，以及包含纳米晶体的光电器件。 本发明的纳米晶体包括芯，在芯的表面上生长并形成的第一壳，以及在芯的表面或第一壳的表面上生长和形成的第二壳。 此外，芯，第一壳和第二壳分别是低能隙材料，中间能隙材料和高能隙材料。 因此，纳米晶体在紫外线范围，可见光范围和红外范围内具有很大的吸收; 并且可以有效地转换太阳光谱以提高其光转换效率。

    Apparatus for manufacturing a quantum-dot element
    5.
    发明申请
    Apparatus for manufacturing a quantum-dot element 审中-公开
    用于制造量子点元件的装置

    公开(公告)号：US20060289853A1

    公开(公告)日：2006-12-28

    申请号：US11187828

    申请日：2005-07-25

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L31/00

    CPC分类号： C23C14/22 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/6715

    摘要： An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.

    摘要翻译： 公开了一种用于制造量子点元件的装置。 该装置包括用于在衬底上蒸发或溅射至少一个电极层或至少一个缓冲层的反应室。 基板支撑基座位于反应室内部，用于固定基板。 雾化器具有气体入口和样品入口。 更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。 本发明的装置可以形成具有均匀分布的量子点的量子点层，并将在量子点层，缓冲层和电极层的形成过程集成在一起。 因此，可以显着提高生产元件的质量。

    Nanowires and method for making the same
    6.
    发明授权
    Nanowires and method for making the same 有权
    纳米线和制作方法

    公开(公告)号：US07566435B2

    公开(公告)日：2009-07-28

    申请号：US11507448

    申请日：2006-08-22

    申请人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    发明人： Hsueh-Shih Chen ,  Shu-Ru Chung ,  Gwo-Yang Chang ,  Shih-Jung Tsai

    IPC分类号： C01B19/00 ,  C01B19/04 ,  C01B17/00 ,  H01M4/58 ,  C01G9/08 ,  C01B17/42 ,  H01L21/36

    CPC分类号： C30B29/60 ,  C30B7/00 ,  C30B29/46 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/813 ,  Y10S977/824

    摘要： A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

    摘要翻译： 公开了制备纳米线的方法，其包括以下步骤：（a）提供含有IIB族元素的第一前体溶液和含有VIA族元素的第二前体溶液; （b）混合和加热第一前体溶液和第二前体溶液以形成混合溶液; 和（c）冷却混合溶液并过滤混合溶液以获得纳米线。 第一前体溶液包括IIB族元素和表面活性剂的化合物。 第二前体溶液包括VIA族元素的化合物。 此外，表面活性剂是具有芳香族基团的有机酸或其盐。

    Method for doping quantum dots
    8.
    发明授权
    Method for doping quantum dots 有权
    掺杂量子点的方法

    公开(公告)号：US07192850B2

    公开(公告)日：2007-03-20

    申请号：US11024801

    申请日：2004-12-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    IPC分类号： H01L21/00

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C23C18/08 ,  H01L21/02409 ,  H01L21/02439 ,  H01L21/0256 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  Y10S977/774

    摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

    摘要翻译： 公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。 本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

    Method for doping quantum dots
    9.
    发明申请
    Method for doping quantum dots 有权
    掺杂量子点的方法

    公开(公告)号：US20050287691A1

    公开(公告)日：2005-12-29

    申请号：US11024801

    申请日：2004-12-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Chien-Ming Chen ,  Gwo-Yang Chang

    IPC分类号： C23C18/08 ,  H01L21/00 ,  H01L21/22 ,  H01L21/368

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C23C18/08 ,  H01L21/02409 ,  H01L21/02439 ,  H01L21/0256 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  Y10S977/774

    摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II-VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.

    摘要翻译： 公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。 本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

    Process for forming a quantum-dot particle layer on a substrate
    10.
    发明授权
    Process for forming a quantum-dot particle layer on a substrate 有权
    在基板上形成量子点粒子层的工艺

    公开(公告)号：US07935388B2

    公开(公告)日：2011-05-03

    申请号：US12494706

    申请日：2009-06-30

    申请人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    发明人： Hsueh-Shih Chen ,  Dai-Luon Lo ,  Gwo-Yang Chang ,  Chien-Ming Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L33/08

    摘要： A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.

    摘要翻译： 用于制造量子点元件的方法利用反应室来蒸发或溅射基板上的至少一个电极层或至少一个缓冲层。 基板支撑基座位于反应室内部，用于固定基板。 雾化器具有气体入口和样品入口。 更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。 量子点元件的制造方法形成了具有均匀分布的量子点的量子点层，并且将同时形成量子点层，缓冲层和电极层的工序集成在一起。