公开(公告)号：US20140256120A1

公开(公告)日：2014-09-11

申请号：US14350282

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/32 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/56 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02664

摘要： A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C. -1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.

摘要翻译： 提供了一种基于与辅助金属膜退火的与Cl2反应制备石墨烯的方法，包括以下步骤：对Si衬底进行常规洗涤，然后将Si衬底放入CVD系统的反应室中并排空， 逐渐升温至950°C -1150°C，供应C3H8，并将Si衬底碳化3-10分钟; 将温度迅速升高至1150℃-1350℃，供应C3H8和SiH4，在碳化层上生长3C-SiC异质外延膜，然后在H2的保护下将温度降至环境温度，引入 将生长的3C-SiC的样品晶片加入石英管中，加热至700-1100℃，供应Ar和Cl2的混合气体，并使Cl2与3C-SiC反应以产生碳膜，涂覆碳膜样品晶片 在金属膜上，在900℃-1100℃退火10-30分钟以将碳膜重构成石墨烯; 并从石墨烯的样品晶片中取出金属膜，以获得大面积的石墨烯。 该方法获得的石墨烯面积大，表面光滑，连续性好，孔隙率低; 该产品可用于密封气体和液体。