公开(公告)号：US3576572A

公开(公告)日：1971-04-27

申请号：US3576572D

申请日：1968-07-15

Applicant: IBM

Inventor： BRASLAU NORMAN

IPC: G11C11/39 ,  H01L47/00 ,  H03K3/02 ,  G11C11/36 ,  H03K3/31

CPC classification number: G11C11/39 ,  H01L47/00 ,  H03K3/02

Abstract: A voltage-stable, negative resistance device is provided that comprises a bulk material which is subjected to both a selected Radio Frequency electric field and a DC bias electric field. A pair of such devices provides a memory when mounted in a waveguide that is subjected to either a standing wave field or a traveling wave field.

公开(公告)号：US3435303A

公开(公告)日：1969-03-25

申请号：US3435303D

申请日：1965-07-19

Applicant: IBM

Inventor： BRASLAU NORMAN

IPC: H01L23/48 ,  H01L27/00 ,  H01L47/00 ,  H01L47/02 ,  H03B9/12 ,  H01L3/00 ,  H01L5/00

CPC classification number: H03B9/12 ,  H01L24/72 ,  H01L27/00 ,  H01L47/00 ,  H01L47/02 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01067 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/12043 ,  H01L2924/00

公开(公告)号：US3445167A

公开(公告)日：1969-05-20

申请号：US3445167D

申请日：1967-01-13

Applicant: IBM

Inventor： ARMSTRONG JOHN A ,  BRASLAU NORMAN

IPC: G01R13/34 ,  H01S3/00 ,  H01S3/11 ,  H05B41/34 ,  G01P3/40

CPC classification number: G01R13/34 ,  H01S3/0007 ,  H01S3/115 ,  H05B41/34