公开(公告)号：US3607468A

公开(公告)日：1971-09-21

申请号：US3607468D

申请日：1968-10-07

Applicant: IBM

Inventor： CHANG JOSEPH J F ,  VORA MADHUKAR B

IPC: A47L15/42 ,  G01D5/244 ,  H01L21/00 ,  H01L21/22 ,  H01L21/265 ,  H01L21/331 ,  H01L27/00 ,  H01L29/36 ,  H01L29/73 ,  H01L7/44

CPC classification number: H01L29/36 ,  A47L15/42 ,  G01D5/244 ,  H01L21/00 ,  H01L21/22 ,  H01L21/265 ,  H01L27/00 ,  H01L29/73 ,  Y10S148/037 ,  Y10S148/04 ,  Y10S148/085 ,  Y10S148/151 ,  Y10S148/157

Abstract: A method for making a high-performance NPN silicon semiconductor device which has an arsenic emitter which gives a substantial improvement in transistor speed and current gain over similar phosphorous emitters. Arsenic atoms in the emitter region tend to squeeze the P-type impurity, such as boron in the base into a narrow base layer. For the same integrated base doping, a much narrower base can be obtained with arsenic-doped emitters than with phosphorous-doped emitters.