公开(公告)号：US3887994A

公开(公告)日：1975-06-10

申请号：US37529573

申请日：1973-06-29

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES A

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532 ,  B01J17/00 ,  H01L7/54 ,  H01L11/14

CPC classification number: H01L29/66568 ,  H01L21/31055 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S257/913 ,  Y10S438/91 ,  H01L2924/00

Abstract: Non-doping ions are implanted in the electrode layer of a semiconductor to reduce contamination of the electrode layer by mobile ions. The dosage of the ions is selected to prevent an increase in the fast surface state density when the ions are implanted. The energy level at which the ions are implanted is controlled to position all of the implanted ions within the electrode layer.

Abstract translation: 非掺杂离子注入到半导体的电极层中以减少电极层被移动离子的污染。 选择离子的剂量以防止离子注入时快速表面状态密度的增加。 控制离子注入的能级被控制以将所有注入的离子置于电极层内。