公开(公告)号：US3585088A

公开(公告)日：1971-06-15

申请号：US3585088D

申请日：1968-10-18

Applicant: IBM

Inventor： SCHWUTTKE GUENTER H ,  HOWARD JAMES K ,  ROSS RUPERT F

IPC: C30B1/02 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/3205 ,  H01L23/52 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01L21/268 ,  C30B1/02 ,  H01L21/00 ,  H01L21/2026 ,  Y10S117/904 ,  Y10S148/037 ,  Y10S148/071 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/152

Abstract: A METHOD OF PRODUCING ORIENTED CRYSTAL OVERGROWTH ON A MONOCRYSTALLINE OR AMORPHOUS SUBSTRATE WHEREIN A FILM OF CRYSTALLINE MATERIAL IS DEPOSITED ON THE SUBSTRATE AND REGIONS OF THE FILM ARE SELECTIVELY BOMBARDED WITH A LASER BEAM PULSE.

公开(公告)号：US3644154A

公开(公告)日：1972-02-22

申请号：US3644154D

申请日：1969-06-09

Applicant: IBM

Inventor： HOOGENDOORN CORNELIUS ,  MOODY MATTIE ,  SCHWUTTKE GUENTER H

IPC: H01L21/673 ,  C30B31/12 ,  C30B31/14 ,  H01L21/22 ,  H01L7/44

CPC classification number: C30B31/14 ,  C30B31/12 ,  Y10S148/006 ,  Y10S148/071

Abstract: A method of fabricating semiconductor structures and devices with reduced crystallographic defects by supporting said wafers in close proximity to a substrate which serves to maintain a linear temperature gradient across the surface of the wafer. The wafer is positioned so that one entire surface thereof is less than one-fourth inch and may be flush against the substrate which has a heat capacity of at least 10 times that of the wafer. The wafer is maintained in this position whenever it is at a temperature above 850* C. The wafer is so maintained during both the periods when such high-heat processing is being carried out, as well as when the wafer is removed from the source of heat and being cooled. There is also provided a wafer holder having a plurality of spaced walls and means for supporting a plurality of wafers in the above-described positions between said walls.