公开(公告)号：US3626257A

公开(公告)日：1971-12-07

申请号：US3626257D

申请日：1969-04-01

Applicant: IBM

Inventor： ESAKI LEO ,  LUDEKE RUDOLF ,  TSU RAPHAEL

IPC: H01L29/15 ,  H01L33/00 ,  H01L47/00 ,  H01L47/02 ,  H01S5/32 ,  H01S5/34 ,  H03B9/12 ,  H01L5/00

CPC classification number: H01L47/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/157 ,  H01L33/00 ,  H01S5/32 ,  H01S5/34 ,  H01S5/3425 ,  H03B9/12 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/169

Abstract: The semiconductor device has two highly N-type end portions to which ohmic contacts are made, and a central portion which has a one dimensional spatial periodic variation, in its band-edge energy. This spatial periodic variation, or superlattice, is produced by doping or alloying to form a plurality of successive layers having alternating band-edge energies. The period of the spatial variation is less than the carrier mean free path, and is such as to form in momentum space a plurality of periodic minizones which are much smaller than the Brillouin zones. The device exhibits a bulk negative resistance and is used in oscillator and bistable circuits.

公开(公告)号：US3626328A

公开(公告)日：1971-12-07

申请号：US3626328D

申请日：1969-04-01

Applicant: IBM

Inventor： ESAKI LEO ,  HOWARD WEBSTER E JR ,  TSU RAPHAEL

IPC: H01L29/15 ,  H01L33/00 ,  H01L47/00 ,  H01S5/30 ,  H01S5/34 ,  H03B9/12 ,  H03B7/06

CPC classification number: H01L47/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/157 ,  H01S5/30 ,  H01S5/34 ,  H01S5/3425 ,  H03B9/12 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/169

Abstract: The semiconductor bulk oscillator includes a body of semiconductor material which includes a superlattice portion across which an electric field is applied. The device responds to this field to produce bulk high-frequency oscillations. The superlattice portion has a one-dimensional periodic spatial variation in its band edge energy produced either by doping or alloying. The periodic variation in band edge energy provides in wave vector space a plurality of minizones which are much smaller than the Brillouin zone. A cavity-type structure is formed transverse to the superlattice portion of the device to extract outputs of electromagnetic energy at high frequencies obtained when an electric field above threshold is applied across the superlattice.