Alterable-latent image monolithic memory
    1.
    发明授权
    Alterable-latent image monolithic memory 失效
    可更改的图像单片存储器

    公开(公告)号:US3662351A

    公开(公告)日:1972-05-09

    申请号:US3662351D

    申请日:1970-03-30

    Applicant: IBM

    Abstract: A monolithic latent image memory is one having a plurality of bistable memory cells. Selected bistable memory cells include AC impedance means which are responsive at the transition from nonsustaining voltage level to an operating level so as to set the selected memory cells to a first predetermined state and thus provide a monolithic memory which is capable of functioning in a read-only and a read-write mode. The read-only state is selectively alterable by employing an AC impedance means which is multi-valued.

    Abstract translation: 单片潜像存储器是具有多个双稳态存储单元的潜像存储器。 所选择的双稳态存储器单元包括AC阻抗装置,其在从非维持电压电平转换到工作电平时响应,以便将所选择的存储器单元设置为第一预定状态,从而提供能够在 只读和读写模式。 通过使用多值的AC阻抗装置可选地改变只读状态。

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